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Mcapacitors


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 -- Function File: [A,B,C]= Mcapacitors(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing models for capacitors.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

       1. STRING = "LIN" (Linear Capacitor)
             − C -> capacitance value
       2. STRING = "MULTICAP" (Multipole Capacitor)
             − C -> capacitance values
       3. STRING = "PDE_NMOS" (Drift-Diffusion PDE NMOS capacitor)
             − tbulk -> bulk thickness
             − tox -> oxide thickness
             − Nnodes -> number of nodes of 1D grid
             − Na -> bulk doping
             − toll -> absolute tolerance
             − maxit -> max iterations number
             − Area -> device area

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing models for capacitors.



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Mcurrentsources


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 -- Function File: [A,B,C]=Mcurrentsources(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing models for current sources.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

       1. STRING = "DC" (Static indipendent current source)
             − I -> Current source value
       2. STRING = "VCCS" (Voltage controlled current source)
             − K -> Control parameter
       3. STRING = "sinwave" (Sinusoidal indipendent current source)
             − shift -> mean value of sinusoidal input
             − Ampl -> amplitude of sinusoidal wave
             − f -> frequency of sinusoidal wave
             − delay -> delay of sinusoidal wave
       4. STRING = "VCPS" (Voltage controlled power source)
             − K -> Control parameter

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing models for current sources.



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Mdiode


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 -- Function File: [A,B,C]=Mdiode(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing models for diodes.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

        − STRING = "simple" (Usual exponential diode model)
             − Is -> reverse current
             − Vth -> thermal voltage
             − Rpar -> parasitic resistance
        − STRING = "PDEsymmetric" (Drift-Diffusion PDE model)
             − len -> diode length
             − Nnodes -> number of nodes of 1D grid
             − Dope -> doping (abrupt and symmetric)
             − toll -> absolute tolerance
             − maxit -> max iterations number
             − Area -> device area

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing models for diodes.



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Minductors


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 -- Function File: [A,B,C]=Minductors(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing models for inductors.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

       1. STRING = "LIN" (Linear inductor model)
             − L -> inductance value

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing models for inductors.



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Mnmosfet


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 -- Function File: [A,B,C]=Mnmosfet(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing standard models for n-mosfets.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

       1. STRING = "simple" (Standard model for MOSFET)
             − rd -> parasitic resistance between drain and source
             − k -> k parameter for usual mosfet model
             − Vth -> threshold voltage
       2. STRING = "lincap" (Adds RC parasitics)
             − rd -> parasitic resistance between drain and source
             − k -> k parameter for usual mosfet model
             − Vth -> threshold voltage
             − Rs -> parasitic source resistance
             − Rd -> parasitic drain resistance
             − Cs -> gate-source capacitance
             − Cd -> gate-drain capacitance
             − Cb -> gate-bulk capacitance

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing standard models for n-mosfets.



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Mpdesympnjunct


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 -- Function File: [J,G]=Mpdesympnjunct (LEN, DOPE, VA, AREA, NNODES,
          TOLL, MAXIT, PTOLL, PMAXIT)

     INTERNAL FUNCTION:

     NOT SUPPOSED TO BE CALLED DIRECTLY BY USERS


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INTERNAL FUNCTION:



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Mpmosfet


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 -- Function File: [A,B,C]= Mpmosfet(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing standard models for p-mosfets.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

       1. STRING = "simple" (Standard model for MOSFET)
             − rd -> parasitic resistance between drain and source
             − k -> k parameter for usual mosfet model
             − Vth -> threshold voltage
       2. STRING = "lincap" (Adds RC parasitics)
             − rd -> parasitic resistance between drain and source
             − k -> k parameter for usual mosfet model
             − Vth -> threshold voltage
             − Rs -> parasitic source resistance
             − Rd -> parasitic drain resistance
             − Cs -> gate-source capacitance
             − Cd -> gate-drain capacitance
             − Cb -> gate-bulk capacitance

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing standard models for p-mosfets.



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Mresistors


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 -- Function File: [A,B,C]=Mresistors(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing models for resistors.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

       1. STRING = "LIN" (Linear resistor)
             − R -> resistance value
       2. STRING = "THERMAL" (Linear resistor with termal pin)
             − R0 -> reference resistance value at temperature ‘TNOM’
             − TC1 -> coefficient for first order Taylor expansion
             − TC2 -> coefficient for second order Taylor expansion
             − TNOM -> reference temperature
       3. STRING = "THERMAL1D" (1D Thermal resistor)
             − L -> length of 1D domain
             − N -> number of discretized elements
             − cv -> PDE coefficient for dynamic part
             − k -> PDE coefficient for diffusion part

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing models for resistors.



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Mshichmanhodgesmosfet


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 -- Function File: [A,B,C]= Mshichmanhodgesmosfet(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing Schichman-Hodges MOSFETs model.

     STRING is used to select among models.  Possible models are:

       1. STRING = "NMOS" (Schichman-Hodges n-MOSFET)
       2. STRING = "PMOS" (Schichman-Hodges p-MOSFET)

     Parameters for all the above models are:
        • rd -> parasitic resistance between drain and source
        • W -> MOSFET width
        • L -> channel length
        • mu0 -> reference value for mobility
        • Vth -> threshold voltage
        • Cox -> oxide capacitance
        • Cgs -> gate-source capacitance
        • Cgd -> gate-drain capacitance
        • Cgb -> gate-bulk capacitance
        • Csb -> source-bulk capacitance
        • Cdb -> drain-bulk capacitance
        • Tshift -> shift for reference temperature on MOSFETs (default
          0)

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


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SBN file implementing Schichman-Hodges MOSFETs model.



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Mvoltagesources


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 -- Function File: [A,B,C]= Mvoltagesources(STRING,PARAMETERS,
          PARAMETERNAMES,EXTVAR,INTVAR,T)

     SBN file implementing models for voltage sources.

     STRING is used to select among models.  Parameters are listed as
     inner items.  Possible models are:

       1. STRING = "DC" (Static indipendent voltage source)
             − V -> Current source value
       2. STRING = "sinwave" (Sinusoidal indipendent voltage source)
             − shift -> mean value of sinusoidal input
             − Ampl -> amplitude of sinusoidal wave
             − f -> frequency of sinusoidal wave
             − delay -> delay of sinusoidal wave
       3. STRING = "pwl" (Piecewise linear voltage source)
             − takes as parameter times and values.  For example ‘0 1 4
               6’ means at time instant 0 value 1, at time instant 4
               value 6, etc.
       4. STRING = "squarewave" (Square wave)
             − low -> low-state value
             − high -> high-state value
             − tlow -> duration of low-state
             − thigh -> duration of high-state
             − delay -> delay of square wave
             − start -> starting voltage value
       5. STRING = "step" (Voltage step)
             − low -> low-state value
             − high -> high-state value
             − tstep -> time instant of step transition
       6. STRING = "VCVS" (Voltage controlled voltage source)
             − K -> Control parameter

     See the ‘IFF file format specifications’ for details about the
     output structures.

     See also: prs_iff,asm_initialize_system,asm_build_system.


# name: <cell-element>
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SBN file implementing models for voltage sources.





